3 Electron-phonon interaction in graphene has been studied previously 11–13, but with the recent advances in fabrication of devices based on other 2D materials, like the first demonstration of a silicene transistor 4, further studies of interaction phenomena in 2D materials are necessary. In such systems two-dimensionality allows very precise control of the carrier density by a gate which enables tuning of the electron-phonon interaction. 1–6 Examples of three such materials are illustrated in Fig.1, showing a monolayer of graphene (A), its Silicon based counterpart, silicene 7–10 (B), and monolayer MoS 2 (C). Two-dimensional (2D) materials are promising candidates for future electronic devices.
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